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BUK71/794R1-40BT
TrenchMOSTM standard level FET
Rev. 01 -- 4 November 2004 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOSTM technology. The devices include TrenchPLUS diodes for over-temperature protection. Product availability: BUK714R1-40BT in SOT426 (D2-PAK) BUK794R1-40BT in SOT263B (TO-220AB).
1.2 Features
s Integrated temperature sensor s Very low on-state resistance s Q101 compliant s 175 C rated.
1.3 Applications
s Electrical Power Assisted Steering s Motors, lamps and solenoids s 12 V loads s General purpose power switching.
1.4 Quick reference data
s s RDSon = 3.4 m (typ) VDS 40 V s ID 75 A s Ptot 272 W.
2. Pinning information
Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426 and SOT263B, simplified outline and symbol Simplified outline
mb mb
Description gate (g) anode (a) drain (d) cathode (k) source (s) mounting base; connected to drain (d)
Symbol
d a
g 12345
03nm72
s
k
Front view
MBK127
1
5
SOT426 (D2-PAK)
MBL263
SOT263B (TO-220AB)
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 75 A; VDS 40 V; VGS = 10 V; RGS = 50 ; starting Tmb = 25 C Human Body Model; C = 100 pF; R = 1.5 k
[1] [2] [1] [2] [2]
Conditions RGS = 20 k
Min -55 -55 -
Max 40 40 20 187 75 75 748 272 +175 +175 187 75 748 1.5
Unit V V V A A A A W C C A A A J
Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Electrostatic discharge Vesd Electrostatic discharge voltage; pins 1,3,5 4 kV
[1] [2]
Current is limited by power dissipation chip rating. Continuous current is limited by package.
9397 750 13954
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
2 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
120 Pder (%)
03na19
200 ID (A) 150
03nm69
80
100
40 50 Capped at 75 A due to package
0 0 50 100 150 200 Tmb (C)
0 0 50 100 150 200 Tmb (C)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 10 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
103 ID (A)
03nm68
limit RDSon = VDS/ ID
tp = 10 s
102
100 s
1 ms Capped at 75 A due to package D.C. 10 ms 10 100 ms
1 10-1
1
10
VDS (V)
102
Tmb = 25 C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 13954
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
3 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
4. Thermal characteristics
Table 3: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions Figure 4 Min Typ Max Unit 0.55 K/W thermal resistance from junction to mounting base thermal resistance from junction to ambient SOT263B (TO-220AB) SOT426 (D2-PAK) vertical in still air minimum footprint; mounted on a PCB 60 50 K/W K/W Symbol Parameter
4.1 Transient thermal impedance
1 Z th(j-mb) (K/W)
03ni64
= 0.5
10-1
0.2 0.1 0.05 0.02
10-2
P
=
tp T
single shot
tp T t
10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 13954
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
4 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
5. Characteristics
Table 4: Characteristics Tj = 25 C unless otherwise specified Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 40 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 50 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VF SF temperature sense diode forward voltage temperature sense diode temperature coefficient total gate charge gate-to-source charge gate-to-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from drain lead 6 mm from package to center of die from contact screw on mounting base to center of die SOT263B from upper edge of drain mounting base to center of die SOT426
9397 750 13954
Min
Typ
Max
Unit
Static characteristics 40 36 V V
2 1 -
3 0.02 2
4 4.4 1 500 100
V V V A A nA
1.58 -2.55
3.4 1.60 -2.83
4.1 7.8 1.63 -3.11
m m V mV/K
IF = 1 mA IF = 1 mA; -55 C < Tj < 175 C VGS = 10 V; VDD = 32 V; ID = 25 A; Figure 14
Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Ld VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VDD = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 83 18 29 5106 1389 527 38 82 141 90 4.5 3.5 6808 1667 721 nC nC nC pF pF pF ns ns ns ns nH nH
-
2.5
-
nH
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
5 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
Table 4: Characteristics...continued Tj = 25 C unless otherwise specified Symbol Ls Parameter internal source inductance Conditions from source lead to source bond pad; lead length 6 mm Min Typ 7.5 Max Unit nH
Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge IS = 25 A; VGS = 0 V; Figure 16 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V 0.85 70 55 1.2 V ns nC
9397 750 13954
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
6 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
300 20 ID (A) 10 7 6.5 200
03nq15
12 RDSon (m) 8
03nq17
Label is VGS (V)
6 100 5.5 5 4.5 0 0 2 4 6 8 10 VDS (V) 0 4 8 12 16 VGS (V) 20 4
Tj = 25 C; tp = 300 s
Tj = 25 C; ID = 50 A
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values.
20 RDSon (mW) 15 6.5 6
03nq16
2 a 1.5
03aa27
Lable is VGS (V)
10
1
7 5 8 10
0.5
20 0 0 100 200 ID (A) 300
0 -60
0
60
120
Tj (C)
180
Tj = 25 C
R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
9397 750 13954
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
7 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2
03aa35
3
typ
10-3
min
typ
max
2
min
10-4
1
10-5
0 -60
10-6 0 60 120 Tj (C) 180 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
120 gfs (S)
03nq18
8000 C (pF) 6000
03nh35
Ciss
80
4000
Coss
40
2000 Crss
0 0 25 50 75 ID (A) 100
0 10-1 1 10 VDS (V) 102
Tj = 25 C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 13954
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
8 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
100 ID (A) 75
03nq19
10 VGS (V) 8 VDD = 14 V 6
03nq21
50
Tj = 175 C 4
VDD = 32 V
Tj = 25 C 25
2
0 0 2 4 VGS (V) 6
0 0 25 50 75 Q (nC) 100 g
VDS = 25 V
Tj = 25 C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values.
1.8 VF (V) 1.6
03nq79
100 IS (A) 75 Tj = 175 C
03nq20
1.4
50
Tj = 25 C
1.2
25
1.0 0 50 100 150 Tj (C) 200
0 0.0 0.3 0.6 0.9 V 1.2 SD (V)
IF = 1 mA
VGS = 0 V
Fig 15. Forward voltage of temperature sense diode as a function of junction temperature; typical values.
Fig 16. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 13954
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
9 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
6. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 SOT263B
E p1 p A A1 q D1
D
mounting base
L1 Q m L L2
1
e b
5
wM c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.85 0.70 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 1.7 L 15.0 13.5 L1
(1)
L2
(2)
m 0.8 0.6
p 3.8 3.6
p1 4.3 4.1
q 3.0 2.7
Q 2.6 2.2
w 0.4
2.4 1.6
0.5
Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION SOT263B REFERENCES IEC JEDEC 5-lead TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-11
Fig 17. SOT263B (TO-220AB).
9397 750 13954
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
10 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
Plastic single-ended surface mounted package (D2-PAK); 5 leads (one lead cropped)
SOT426
A E A1
D1 mounting base
D
HD
3 1
Lp
2
4
5
b
c Q
e
e
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.70 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT426
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-06-25 04-10-13
Fig 18. SOT426 (D2-PAK)
9397 750 13954 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
11 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
7. Soldering
10.85 10.60 10.50 1.50 7.50 7.40 1.70
2.25 2.15
8.15
8.35
8.275 1.50
4.60
0.30 4.85
5.40 8.075
7.95
3.00
0.20
solder lands solder resist occupied area solder paste
1.70 (2x)
3.40 8.15
0.90 1.00
MSD058
Dimensions in mm.
Fig 19. Reflow soldering footprint for SOT426.
9397 750 13954
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
12 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
8. Revision history
Table 5: Rev Date 01 20041104 Revision history CPCN Description Product data; initial version.
9397 750 13954
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
13 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
9. Data sheet status
Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
12. Trademarks
TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 13954
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 4 November 2004
14 of 15
Philips Semiconductors
BUK71/794R1-40BT
TrenchMOSTM standard level FET
Contents
1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
(c) Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 4 November 2004 Document order number: 9397 750 13954

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